unisonic technologies co., ltd mpsa194 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r201-026.c pnp epitaxial silicon transistor ? description the utc mpsa194 is designed for high voltage low power switching applications especially for use in telephone and telecommunication circuits. ? features * collector-emitter voltage: v ceo =400v * power dissipation: 1.0w ? applications * telephone circuit * telecommunication circuit lead-free: mpsa194l halogen-free: mpsa194g ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing MPSA194-T92-B mpsa194l-t92-b mpsa194g-t92-b to-92 e b c tape box mpsa194-t92-k mpsa194l-t92-k mpsa194g-t92-k to-92 e b c bulk
mpsa194 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r201-026.c ? absolute maximum ratings parameter symbol ratings unit collector to base voltage v cbo -400 v collector to emitter voltage v ceo -400 v emitter to base voltage v ebo -6 v collector current i c -800 ma collector dissipation (ta=25 c) p c 1.0 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t j =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-100a, i e =0a -400 v collector-emitter breakdown voltage bv ceo i c =-1ma, i b =0a -400 v collect cut-off current i cbo v cb =-400 v, i e =0a -10 a collect cut-off current i ceo v cb =-200 v, v be =0v -1 a emitter cut-off current i ebo v eb = -6 v, i c =0a -0.2 a v ce =-10 v ,i c =-1ma 50 v ce =-10 v ,i c =-20ma 50 800 dc current gain h fe v ce =-10 v ,i c =-80ma 40 base-emitter satura tion voltage v be(sat) i c =-20ma, i b =- 2ma -0.9 v i c =-20ma, i b =- 4ma -0.2 v collector-emitter satu ration voltage v ce(sat) i c =-80ma, i b =- 2ma -1.2 v output capacitance c ob v cb =-20 v, i e =0a, f =1mhz 30 pf current gain bandwidth product f t v ce =-20v, i e =-10a, f =1mhz 10 mh z
mpsa194 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r201-026.c ? typical characteristics collector current , i c (ma) collector current , i c (a) emitter current , i e (a) collector current , i c (ma) collector current , i c (ma)
mpsa194 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r201-026.c utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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